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质谱分析GaAs- 玻璃粘接阴极组件在高温热辐射除气时的放气成份

Mass spectrometry analysis of GaAs- glass bonded cathode assembly in high temperature thermal radiation degassing components

Modern Analytical Chemistry Research / 2019,1(1): 1-8 / 2019-12-27 927 899

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• Authors: 胡媛媛
• Information:

  武汉纺织大学，武汉

• Keywords:
  GaAs components; Glass bonding; Thermal radiation degassing; Mass spectrometry analysis
  GaAs 组件; 玻璃粘接; 热辐射除气; 质谱分析
• Abstract: In order to solve the problem of low electron emission sensitivity of negative electron affinity GaAs photocathode, mass spectrometer was used to analyze the deflating components of GaAs glass bonded cathode assembly under high temperature thermal radiation degassing, and the atomic surface of GaAs electron emission layer was obtained. The results showed that: 150 ℃ was the surface venting of the component, 450 ℃ was the internal venting of the material, 580 ℃ was the obtained temperature of the clean surface, and more than 650 ℃ , there was As evaporation in the GaAs emission layer. This indicates that strictly controlling the surface clean temperature of emission layer is the key to ensure the sensitivity of cathode. 为解决负电子亲合势GaAs 光电阴极电子发射灵敏度低的问题，运用质 谱计对GaAs- 玻璃粘接阴极组件在高温热辐射除气时的放气成份进行了分析， 获得了GaAs 电子发射层原子级表面。结果表明：组件150℃为表面放气，450℃ 为材料体内放气，580℃为洁净表面获得温度，大于650℃时GaAs 发射层面有 As 蒸发。这说明严格控制发射层表面洁净温度，是保证制备高性能阴极灵敏度 的关键。
• DOI: https://doi.org/10.35534/macr.0101001c
• Cite: 胡媛媛．质谱分析GaAs-玻璃粘接阴极组件在高温热辐射除气时的放气成份［J］．现代分析化学研究，2019，1（1）：1-8．